Asymmetric spin torque unlocks deterministic control of antiferromagnetic memory

A research team led by Prof. Shao Dingfu from the Hefei Institutes of Physical Science, Chinese Academy of Sciences, has ...
Nanowerk

In-memory mathematical operations with spin-orbit torque devices

(Nanowerk Spotlight) Analogue arithmetic operations are the most fundamental mathematical operations used in image processing, signal processing and artificial intelligence (AI). Under error-tolerant ...
Semiconductor Engineering

Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory

“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...
Science Daily

Toward ultrafast computer chips that retain data even when there is no power

An international team of researchers has created a new technique for magnetization switching -- the process used to 'write' information into magnetic memory -- that is nearly 100 times faster than ...
EurekAlert!

NUS researchers achieve significant breakthrough in topological insulator based devices

The current induced magnetisation switching by spin-orbit torque (SOT) is an important ingredient for modern non-volatile magnetic devices such as magnetic random access memories and logic devices ...
EurekAlert!

Magnon Torque Device (IMAGE)

Future magnon torque based devices such as this could allow for faster electronic gadgets that require less power and do not overheat. Disclaimer: AAAS and EurekAlert! are not responsible for the ...