CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...
A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...
Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel ...
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Key transistor for next-generation 3D stacked semiconductors operates without current leakage
A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...
Tokyo, Japan – Hailed as one of the greatest inventions of the 20 th century, transistors are integral components of modern electronics that amplify or switch electrical signals. As electronics become ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...
Transistors, the building blocks of microprocessors, may have only one place to go in the future according to Intel researchers: up. At a presentation in Japan this week, the Santa Clara, Calif.-based ...
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